MRF6S19140HR3 MRF6S19140HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
?10
?28
?12
?14
?16
?18
?20
?22
?24
?26
?30
η
D
, DRAIN
EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
2000
1910
1920 1940 1960 1980 1990
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier N-CDMA Broadband Performance @ Pout
= 29 Watts Avg.
?10
?28
VDD= 28 Vdc, Pout
= 29 W (Avg.), I
DQ
= 1150 mA
2?Carrier N?CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
1970
1950
1930
0
20
18
16
14
12
8
6
4
?100
40
30
20
10
?10
?20
?40
?60
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier N-CDMA Broadband Performance @ Pout
= 75 Watts Avg.
2
18
16
12
10
8
6
4
?80
50
30
20
0
?20
?40
?60
Figure 5. Two-Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
10 400100
12
18
1
IDQ
= 1700 mA
1500 mA
VDD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two?Tone Measurements, 2.5 MHz Tone Spacing
900 mA
16
15
13
?10
1 10010
?20
?30
?40
1000
?60
?50
η
D
, DRAIN
EFFICIENCY (%)
ηD
ηD
G
ps
, POWER GAIN (dB)
G
ps
, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP
G
ps
, POWER GAIN (dB)
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
10
2
0
?80
?12
?14
?16
?18
?20
?22
?24
?26
?30
14
2000
1910 19701920 1940 1960 1980 19901930
1950
40
VDD= 28 Vdc, Pout
= 75 W (Avg.), I
DQ
= 1150 mA
2?Carrier N?CDMA, 2.5 MHz Carrier Spacing,
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
17
14
1150 mA
600 mA
IDQ
= 1700 mA
1500 mA
VDD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two?Tone Measurements, 2.5 MHz Tone Spacing
900 mA
1150 mA
600 mA
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